2SA1971 features high voltage: v ce = -400 v absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -7 v collector current i c -0.5 a collector current(pulse) i cp -1 a base current i b -0.25 a 500 1000 * junction temperature tj 150 storage temperature range t stg -55to+150 * mounted on ceramic substrate (250 mm 2 x 0.8 t) mw p c collector power dissipation electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =-400v, i e =0 -10 a emitter cut-off current i ebo v eb =-7v,i c =0 -1 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -400 v v ce =-5v,i c =-20ma 140 450 v ce =-5v,i c =-100ma 140 400 collector-emitter saturation voltage v ce (sat) i c =-100ma,i b =-10ma -0.4 -1 v base-emitter saturation voltage v be (sat) i c =-100ma,i b =-10ma -0.76 -0.9 v transition frequency f t v ce =-5v,i c =-50ma 35 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 18 pf turn-on time t on 0.2 s storage time t stg 2.3 s fall time t f 0.2 s h fe dc current gain smd type transistors smd type transistors smd type transistors smd type product specification sales@twtysemi.com 1of 1 http://www.twtysemi.com 4008-318-123
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